2sb1143/2sd1683 no.2063-1/7 applications ? voltage regulators, relay drivers, lamp drivers, electrical equipment features ? adoption of fbet, mbit processes ? low saturation voltage ? large current capacity and wide aso speci cations ( ): 2sb1143 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)4 a collector current (pulse) i cp (--)6 a collector dissipation p c 1.5 w tc=25 c10w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7516a-002 ordering number : EN2063c 90512 tkim/o2003tn (koto)/92098ha (kt)/4137ki/d176ta, ts sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : to-126ml ? jeita, jedec : to-126 ? minimum packing quantity : 200 pcs./bag marking electrical connection 1 : emitter 2 : collector 3 : base sanyo : to-126ml 0.8 0.75 2.4 4.8 0.8 0.7 8.0 4.0 1.0 1.0 3.6 1.4 1.6 1.5 1.7 7.5 3.0 15.5 11.0 3.3 3.0 123 lot no. rank b1143 lot no. rank d1683 2 1 3 2sd1683 2 1 3 2sb1143 2sb1143s 2sb1143t 2sd1683s 2sd1683t 2sb1143/2sd1683 pnp/npn epitaxial planar silicon transistor 50v/4a switching applications
2sb1143/2sd1683 no.2063-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe 1v ce =(--)2v, i c =(--)100ma 100* 560* h fe 2v ce =(--)2v, i c =(--)3a 40 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 150 mhz output capacitance cob v cb =(--)10v, f=1mhz (39)25 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)2a, i b =(--)100ma (--350)190 (--700)500 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma (--)0.94 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (70)70 ns storage time t stg (450)650 ns fall time t f (30)35 ns * : the 2sb1143/2sd1683 are classi ed by 100ma h fe as follows : rank r s t u h fe 100 to 200 140 to 280 200 to 400 280 to 560 switching time test circuit ordering information device package shipping memo 2sb1143s to-126ml 200pcs./bag pb free 2sb1143t to-126ml 200pcs./bag 2sd1683s to-126ml 200pcs./bag 2sd1683t to-126ml 200pcs./bag i c =10i b1 = --10i b2 =1a (for pnp, the polarit y is reversed.) v r r b v cc =25v v be = --5v + + 50 input outpu t r l 25 100 f 470 f pw=20 s i b1 d.c. 1% i b2
2sb1143/2sd1683 no.2063-3/7 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a h fe -- i c collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe -- 5 -- 3 -- 2 -- 1 -- 4 0 0 --0.4 --0.8 --2.0 --1.6 --1.2 i b =0ma itr09047 2sb1143 --5ma --10ma --20ma --50ma --100ma --200ma 5 3 2 1 4 0 0 0.4 0.8 2.0 1.6 1.2 i b =0ma itr09048 2sd1683 5ma 10ma 20ma 80ma 60ma 40ma 100ma 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.2 --1.0 --4.8 --4.0 --3.2 --2.4 --1.6 --0.8 0 itr09051 ta=75 c 25 c --25 c 2sb1143 v ce = --2v 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 4.8 4.0 3.2 2.4 1.6 0.8 0 itr09052 ta=75 c 25 c --25 c 2sd1683 v ce =2v 2 3 5 7 1000 2 3 5 7 100 10 23 5 --0.01 23 5 5 --0.1 23 7 7 7 --1.0 itr09053 2sb1143 v ce = --2v ta=75 c 25 c --25 c 2 3 5 7 1000 2 3 5 7 100 10 23 5 0.01 23 5 5 0.1 23 7 7 7 1.0 itr09054 ta=75 c 25 c --25 c 2sd1683 v ce =2v --2.0 --1.2 --0.8 --0.4 --1.6 0 0 --4 --8 --20 --16 --12 i b =0ma itr09049 2sb1143 --2ma --4ma --6ma - -8ma --14ma --12ma --10ma 2.0 1.2 0.8 0.4 1.6 0 048 20 16 12 i b =0ma itr09050 2sd1683 2ma 1ma 3ma 4ma 6ma 5ma 8ma 7ma
2sb1143/2sd1683 no.2063-4/7 v ce (sat) -- i c collector current, i c -- a v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c p c -- ta 23 5 0.1 10 23 5 0.01 23 57 7 7 1.0 100 10 2 5 7 1000 7 5 3 2 3 itr09055 2sb1143 2sd1683 1.0 10 7 3 5 100 10 2 3 5 2 27 35 100 27 35 itr09056 2sb1143 / 2sd1683 v ce =10v 2sb1143 2sd1683 2sb1143 / 2sd1683 f=1mhz 1.0 0.1 10 5 7 3 2 5 7 3 5 7 3 2 2 1.0 10 257 3 3 100 257 3 57 itr09061 0 12 10 8 4 6 2 1.5 0 20 40 60 100 120 160 140 80 itr09062 no heat sink 2sb1143 / 2sd1683 5 7 7 3 2 2 5 3 --1.0 --10 23 57 77 --0.01 23 5 23 5 --0.1 --1.0 itr09059 2sb1143 i c / i b =20 25 c 75 c ta= --25 c 5 7 7 3 2 2 5 3 1.0 0.1 10 23 57 77 0.01 23 5 23 5 0.1 1.0 itr09060 25 c 75 c ta= --25 c 2sd1683 i c / i b =20 100ms 10ms 1ms dc operation tc=25 c dc operation ta=25 c 2sb1143 / 2sd1683 i c =4a i cp =6a 2 5 7 3 2 5 7 3 2 5 3 --1000 --10 --100 23 57 77 --0.01 23 5 3 5 --0.1 2 --1.0 itr09057 2sb1143 i c / i b =20 75 c 25 c ta= --25 c 2 5 7 3 2 5 7 3 2 5 3 1000 10 100 23 57 77 0.01 23 5 3 5 0.1 2 1.0 itr09058 25 c ta=75 c -- 2 5 c 2sd1642 i c / i b =20 for pnp, the minus sign is omitted. for pnp, the minus sign is omitted. tc=25 c single pulse for pnp, the minus sign is omitted.
2sb1143/2sd1683 no.2063-5/7 bag packing speci cation 2sb1143s, 2sb1143t, 2sd1683s, 2sd1683t
2sb1143/2sd1683 no.2063-6/7 outline drawing 2sb1143s, 2sb1143t, 2sd1683s, 2sd1683t mass (g) unit 0.97 * for reference mm
2sb1143/2sd1683 ps no.2063-7/7 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
